Low-threshold InGaAs/GaAsSb 'W'-type quantum well laser on InP substrate

The mid-infrared electrically-driven laser using InGaAs/GaAsSb `W'-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 μm with the lowest threshold current density of 1.42 kA/cm 2 is presented.

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Bibliographic Details
Published in:	2014 Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications pp. 1 - 2
Main Authors:	Chia-Hao Chang, Zong-Lin Li, Hong-Ting Lu, Chien-Ping Lee, Sheng-Di Lin
Format:	Conference Proceeding
Language:	English
Published:	The Optical Society 01-06-2014
Subjects:	Cavity resonators Indium phosphide Measurement by laser beam Semiconductor lasers Substrates Threshold current
Online Access:	Get full text
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Description
Summary:	The mid-infrared electrically-driven laser using InGaAs/GaAsSb `W'-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 μm with the lowest threshold current density of 1.42 kA/cm 2 is presented.
ISSN:	2160-8989 2160-9004