Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristics

An ultrathin ~1 nm TaO x layer was inserted at the interface between a top Pt electrode and TiO 2 as a restive switching dielectric to investigate resistive switching characteristics. A marked change in the initial resistance state and an improvement of the endurance were observed. These results can...

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Bibliographic Details

Published in:	2011 International Meeting for Future of Electron Devices pp. 110 - 111
Main Authors:	Guobin Wei, Murakami, H., Fujioka, T., Ohta, A., Goto, Y., Higashi, S., Miyazaki, S.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-05-2011
Subjects:	Bonding Dielectrics Electrodes Nonvolatile memory redox reaction Reservoirs Resistance stack structure Switches tantalum oxide titanium oxide
Online Access:	Get full text
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