Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristics

Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristics

An ultrathin ~1 nm TaO x layer was inserted at the interface between a top Pt electrode and TiO 2 as a restive switching dielectric to investigate resistive switching characteristics. A marked change in the initial resistance state and an improvement of the endurance were observed. These results can...

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Bibliographic Details
Published in:2011 International Meeting for Future of Electron Devices pp. 110 - 111
Main Authors: Guobin Wei, Murakami, H., Fujioka, T., Ohta, A., Goto, Y., Higashi, S., Miyazaki, S.
Format: Conference Proceeding
Language:English
Published: IEEE 01-05-2011
Subjects:
Bonding
Dielectrics
Electrodes
Nonvolatile memory
redox reaction
Reservoirs
Resistance
stack structure
Switches
tantalum oxide
titanium oxide
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Summary:An ultrathin ~1 nm TaO x layer was inserted at the interface between a top Pt electrode and TiO 2 as a restive switching dielectric to investigate resistive switching characteristics. A marked change in the initial resistance state and an improvement of the endurance were observed. These results can be interpreted as due to the TaO x layer working as an oxygen reservoir.
ISBN:1612841457
9781612841458
DOI:10.1109/IMFEDK.2011.5944869