X-parameter based GaN device modeling and its application to a high-efficiency PA design

• Published in: 2014 International Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO) pp. 1 - 4
• Main Authors: Yelin Wang, Nielsen, Troels S., Jensen, Ole K., Larsen, Torben
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-05-2014
• Subjects: Gallium nitride; Harmonic analysis; Impedance; Load modeling; Power system harmonics; Tuners
• DOI: 10.1109/NEMO.2014.6995691

X-parameters are supersets of S-parameters and applicable to both linear and nonlinear system modeling. In this paper, a packaged 6 W Gallium Nitride (GaN) RF power transistor is modeled using load-dependent X-parameters by simulations. During the device characterization the load impedance is tuned only up to the 2 nd -order harmonic. However, it proves that the model can still accurately approximate the behavior of the transistor under impedance tuning up to the 3 rd -order harmonic. The simulation results preliminarily validate the concept of utilizing the X-parameter based modeling technique to decrease the complexity of a harmonic load-pull measurement setup. A high-efficiency 2 GHz power amplifier is also designed for further validation of the concept.