X-parameter based GaN device modeling and its application to a high-efficiency PA design

X-parameter based GaN device modeling and its application to a high-efficiency PA design

X-parameters are supersets of S-parameters and applicable to both linear and nonlinear system modeling. In this paper, a packaged 6 W Gallium Nitride (GaN) RF power transistor is modeled using load-dependent X-parameters by simulations. During the device characterization the load impedance is tuned...

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Bibliographic Details
Published in:2014 International Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO) pp. 1 - 4
Main Authors: Yelin Wang, Nielsen, Troels S., Jensen, Ole K., Larsen, Torben
Format: Conference Proceeding
Language:English
Published: IEEE 01-05-2014
Subjects:
Gallium nitride
Harmonic analysis
Impedance
Load modeling
Power system harmonics
Tuners
Online Access:Get full text
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Summary:X-parameters are supersets of S-parameters and applicable to both linear and nonlinear system modeling. In this paper, a packaged 6 W Gallium Nitride (GaN) RF power transistor is modeled using load-dependent X-parameters by simulations. During the device characterization the load impedance is tuned only up to the 2 nd -order harmonic. However, it proves that the model can still accurately approximate the behavior of the transistor under impedance tuning up to the 3 rd -order harmonic. The simulation results preliminarily validate the concept of utilizing the X-parameter based modeling technique to decrease the complexity of a harmonic load-pull measurement setup. A high-efficiency 2 GHz power amplifier is also designed for further validation of the concept.
DOI:10.1109/NEMO.2014.6995691