Poly-silicon quantum dot single electron transistors

Poly-silicon quantum dot single electron transistors

For room temperature operation and reproducibility of single electron transistors (SETs), we propose a fabrication method of an SET with a self-aligned quantum dot. The quantum dot is formed by selective etch of a silicon nanowire on a planarized surface and subsequent deposition and etch-back of po...

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Bibliographic Details
Published in:2007 International Semiconductor Device Research Symposium pp. 1 - 2
Main Authors: Kwon-Chil Kang, Sangwoo Kang, Hong Sun Yang, Seung-hwan Song, Jinho Kim, Jong Duk Lee, Byung-Gook Park
Format: Conference Proceeding
Language:English
Published: IEEE 01-12-2007
Subjects:
Educational institutions
Electron devices
Etching
Fabrication
Planarization
Plasma applications
Quantum computing
Quantum dots
Silicon
Single electron transistors
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Summary:For room temperature operation and reproducibility of single electron transistors (SETs), we propose a fabrication method of an SET with a self-aligned quantum dot. The quantum dot is formed by selective etch of a silicon nanowire on a planarized surface and subsequent deposition and etch-back of poly-silicon. The device is named as PQD-SET, i.e., poly-silicon quantum dot SET. PQD-SET shows clear Coulomb oscillation at room temperature.
ISBN:9781424418916
1424418917
DOI:10.1109/ISDRS.2007.4422255