An FPGA-based manipulation system for ReRAM characterization

• Published in: 2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) pp. 31 - 34
• Main Authors: Jinling Xing, Qingjiang Li, Jiwei Li, Wei Wang, Haijun Liu, Hui Xu
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-07-2016
• Subjects: Characterization; Clocks; Field programmable gate arrays; FPGA; multi-level; Performance evaluation; Random access memory; ReRAM; Resistance; resistance tuning; Switches; transient response; Writing
• DOI: 10.1109/3M-NANO.2016.7824928

ReRAM is a promising candidate for future nonvolatile high-density memory, while the electrical characterization progress may be hindered by the shortages of general semiconductor characterization instruments. This paper introduces a user-friendly FPGA-based characterization system, aiming to provide a power tool to facilitate electrical property assessments of multi-level ReRAM devices in either standalone or crossbar array. The detail design of the hardware and software is presented for the purpose of providing design references for the developments of similar systems. Experimental results show that the system can achieve maximum 1.5% readout error for resistance range of 100Ω~1MΩ. Besides, the system also shows its capabilities in capturing the transient change of ReRAM devices and manipulating device resistance in crossbar array by adopting complex resistance tuning algorithm.