Effect of interfacial states on the technological variability of trigate MOSFETs

Effect of interfacial states on the technological variability of trigate MOSFETs

This work studies the influence of the interfacial states on the performance of Trigate MOSFETs and, specifically, on the Subthreshold Swing (SS) and threshold voltage (V T ) variability. To do so, a solver for the 2D Schrödinger-Poisson coupled equation system has been developed, including the eff...

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Bibliographic Details
Published in:2012 IEEE Silicon Nanoelectronics Workshop (SNW) pp. 1 - 2
Main Authors: Gonzalez-Marin, E., Ruiz, F. G., Godoy, A., Tienda-Luna, I. M., Gamiz, F.
Format: Conference Proceeding
Language:English
Published: IEEE 01-06-2012
Subjects:
Electrostatics
FETs
Geometry
Insulators
Logic gates
Mathematical model
Performance evaluation
Online Access:Get full text
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Summary:This work studies the influence of the interfacial states on the performance of Trigate MOSFETs and, specifically, on the Subthreshold Swing (SS) and threshold voltage (V T ) variability. To do so, a solver for the 2D Schrödinger-Poisson coupled equation system has been developed, including the effects of interfacial states (D it ). Different D it (E) profiles have been considered, analyzing their influence for several device geometries.
ISBN:1467309966
9781467309967
ISSN:2161-4636
2161-4644
DOI:10.1109/SNW.2012.6243295