A 900 MHz 26.8 dBm differential Class-E CMOS power amplifier

A 900 MHz 26.8 dBm differential Class-E CMOS power amplifier

A 900 MHz differential Class-E amplifier with finite dc inductance has been designed in CMOS. The large inductance of RF choke has been replaced with a finite inductance that provides the required inductive reactance of the class E amplifier. Resonance circuit is realized without series inductor by...

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Bibliographic Details
Published in:German Microwave Conference Digest of Papers pp. 276 - 279
Main Authors: Khan, H R, Wahab, Q, Fritzin, J, Alvandpour, A
Format: Conference Proceeding
Language:English
Published: IEEE 01-03-2010
Subjects:
Class E
differential amplifier
Differential amplifiers
finite inductance
Impedance matching
Inductance
Inductors
lattice LC balun
Lattices
Power amplifiers
Radio frequency
Radiofrequency amplifiers
Resonance
RLC circuits
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Summary:A 900 MHz differential Class-E amplifier with finite dc inductance has been designed in CMOS. The large inductance of RF choke has been replaced with a finite inductance that provides the required inductive reactance of the class E amplifier. Resonance circuit is realized without series inductor by novel use of lattice LC balun. The amplifier delivers 26.8 dBm power to a 50 Ω load from a 2.2 V supply. A maximum Power Added Efficiency (PAE) of 43% is achieved.
ISBN:1424449332
9781424449330
ISSN:2167-8022
2167-8030