Characterization and modeling of accumulation-mode MOS varactors

• Published in: Canadian Conference on Electrical and Computer Engineering, 2005 pp. 1554 - 1557
• Main Authors: Sameni, P., Siu, C., Iniewski, K., Mirabbasi, S., Djahanshahi, H., Hamour, M., Chana, J.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2005
• Subjects: CMOS process; CMOS technology; MOS devices; MOSFETs; Scattering parameters; Semiconductor device modeling; Tuning; Varactors; Voltage; Voltage-controlled oscillators
• ISBN: 0780388852; 9780780388857
• ISSN: 0840-7789; 2576-7046
• DOI: 10.1109/CCECE.2005.1557277

The characterization and modeling of an accumulation-mode MOS varactor implemented in a standard 0.13 mum CMOS process is discussed. An experimental model based on the physical parameters of the device is verified. The model has been extracted, using S-parameter measurements, from different MOS varactor structures and is valid in both accumulation and depletion regions. The model has been verified both directly using the extracted values and indirectly by comparing the measured and simulated tuning curves of 5-6 GHz voltage controlled oscillators designed in the same process