InGaN/GaN Light-Emitting Diodes with Designed Top Electrode: Models and Simulation

Light-emitting diodes (LEDs) with InGaN/GaN quantum wells (QWs) and top metal electrode designed as a mesh are discussed. Analysis of LED's experimental electroluminescence (EL) spectra is performed using their two-step decomposition into Gaussian functions (GFs).

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Bibliographic Details
Published in:	2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) pp. 1 - 4
Main Authors:	Khmyrova, I., Nishidate, Y., Kholopova, J., Polushkin, E., Kovalchuk, A., Zemlyakov, V., Tsatsul'nikov, A., Shapoval, S.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-10-2018
Subjects:	Electric potential Electrodes Electroluminescence Light emitting diodes Metals Optimized production technology Strips
Online Access:	Get full text
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Description
Summary:	Light-emitting diodes (LEDs) with InGaN/GaN quantum wells (QWs) and top metal electrode designed as a mesh are discussed. Analysis of LED's experimental electroluminescence (EL) spectra is performed using their two-step decomposition into Gaussian functions (GFs).
ISSN:	2474-9737
DOI:	10.1109/ASDAM.2018.8544517