An active balanced up-converter module in InP-on-BiCMOS technology

• Published in: 2017 IEEE MTT-S International Microwave Symposium (IMS) pp. 953 - 956
• Main Authors: Hossain, M., Meliani, C., Schukfeh, M. I., Weimann, N., Lisker, M., Krozer, V., Heinrich, W.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-06-2017
• Subjects: BiCMOS integrated circuits; Gain; III-V semiconductor materials; Indium phosphide; InP double heterojunction bipolar transistor (DHBT); Marchand balun; millimeter wave (mm-wave); Mixers; monolithic microwave integrated circuit (MMIC); transferred-substrate process (TS); Voltage-controlled oscillators
• DOI: 10.1109/MWSYM.2017.8058745

This paper presents an active up-converter realized as hetero-integrated module in InP-on-BiCMOS technology. It consists of a fundamental Voltage Controlled Oscillator (VCO) in 0.25 μm BiCMOS technology and a frequency multiplier followed by double balanced Gilbert mixer cell in 0.8 μm transferred substrate (TS) InP-HBT technology, which is integrated on top of the BiCMOS MMIC. The fundamental VCO operates at 54 GHz. The module achieves a single-sideband (SSB) power up-conversion gain of 2.5 dB and -3.5 dB at 82 GHz and 106 GHz, respectively. It exhibits > 25 GHz IF bandwidth. To the knowledge of the authors, this is the first heterointegrated module reported so far.