Random Telegraph Signals and 1/f Noise in ZnO Nanowire Field Effect Transistors

• Published in: 2007 7th IEEE Conference on Nanotechnology (IEEE NANO) pp. 1139 - 1143
• Main Authors: Xiong, H.D., Wenyong Wang, Qiliang Li, Richter, C.A., Suehle, J.S., Woong-Ki Hong, Takhee Lee, Fleetwood, D.M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-08-2007
• Subjects: 1/f noise; Electron traps; FETs; Fluctuations; Logic gates; nanowire; Noise; oxide trap; random Telegraph; Signal; Temperature measurement; Zinc oxide; ZnO
• ISBN: 9781424406074; 1424406072
• ISSN: 1944-9399; 1944-9380
• DOI: 10.1109/NANO.2007.4601384

Single-crystal ZnO nanowires have been fabricated as field effect transistors (FETs). The low frequency noise in the drain current of n-type ZnO FETs has been investigated through random telegraph signals (RTSs) at 4.2 K and 1/f noise at room temperature. At room temperature, the noise power spectra have a classic 1/f dependence with a Hooge parameter that is ~ 5 times 10 -3 . ZnO FETs measured in a dry O 2 - environment displayed elevated noise levels that can be attributed to increased fluctuations associated with O 2 - on the nanowire surfaces. At 4.2 K, the deviceiquests noise spectra change from 1/f to Lorentzian type, and the current traces as a function of time show random telegraph signals (RTSs). The channel current RTSs are attributed to correlated carrier number and mobility fluctuation due to the trapping and emission of carriers by discrete border traps. At certain bias conditions, the current in the channel shows three-level switching events with amplitudes as high as 40 %, from which two individual defects with energies close to the Fermi level in the ZnO channel can be distinguished.