The dynamic stability of a 10T SRAM compared to 6T SRAMs at the 32nm node using an accelerated Monte Carlo technique

• Published in: 2008 IEEE Dallas Circuits and Systems Workshop: System-on-Chip - Design, Applications, Integration, and Software pp. 1 - 4
• Main Authors: Seshadri, A., Houston, T.W.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-10-2008
• Subjects: Acceleration; Circuit stability; Distributed computing; Instruments; Monte Carlo methods; Probability distribution; Random access memory; Space vector pulse width modulation; Stability analysis; Stability criteria
• ISBN: 9781424429554; 1424429552
• DOI: 10.1109/DCAS.2008.4695924

An accelerated Monte Carlo technique is proposed to analyze the dynamic stability margin of SRAM cells. This technique greatly improves accuracy of the desired failure probabilities by, not approximating or making assumptions of fail tail distributions, enhancing fail rate with acceleration, while reducing computations by several orders of magnitude. An application comparing three 6 T SRAM cells and a novel 10 T SRAM cell at the 32 nm node is discussed.