Physical transport simulation for path-finding and device optimization

We present a novel simulation approach for transport modeling in nano-scaled devices. It is based on the solution of the Boltzmann transport equation (BTE) in phase space using a k·p-based electronic structure model and includes all relevant scattering processes. The modeling framework is suitable l...

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Bibliographic Details

Published in:	2016 IEEE Silicon Nanoelectronics Workshop (SNW) pp. 208 - 209
Main Authors:	Karner, M., Stanojevic, Z., Baumgartner, O., Karner, Hw, Kernstock, C., Demel, H., Mitterbauer, F.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-06-2016
Subjects:	Computational modeling Logic gates Mathematical model MOS devices Numerical models Scattering Silicon
Online Access:	Get full text
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