Physical transport simulation for path-finding and device optimization

Physical transport simulation for path-finding and device optimization

We present a novel simulation approach for transport modeling in nano-scaled devices. It is based on the solution of the Boltzmann transport equation (BTE) in phase space using a k·p-based electronic structure model and includes all relevant scattering processes. The modeling framework is suitable l...

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Bibliographic Details
Published in:2016 IEEE Silicon Nanoelectronics Workshop (SNW) pp. 208 - 209
Main Authors: Karner, M., Stanojevic, Z., Baumgartner, O., Karner, Hw, Kernstock, C., Demel, H., Mitterbauer, F.
Format: Conference Proceeding
Language:English
Published: IEEE 01-06-2016
Subjects:
Computational modeling
Logic gates
Mathematical model
MOS devices
Numerical models
Scattering
Silicon
Online Access:Get full text
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Summary:We present a novel simulation approach for transport modeling in nano-scaled devices. It is based on the solution of the Boltzmann transport equation (BTE) in phase space using a k·p-based electronic structure model and includes all relevant scattering processes. The modeling framework is suitable low and high V DD regime and consistently covers all the necessary physics like confinement, velocity overshoot, and quantum resistance to give meaningful predictions using only few material parameters. With a highly efficient numerical implementation, the approach is suitable for both path-finding and device optimization.
DOI:10.1109/SNW.2016.7578054