Few-layer black phosporous PMOSFETs with BN/AI2O3 bilayer gate dielectric: Achieving Ion=850μA/μm, gm=340μS/μm, and Rc=0.58kΩ·μm

• Published in: 2016 IEEE International Electron Devices Meeting (IEDM) pp. 5.5.1 - 5.5.4
• Main Authors: Yang, L. M., Qiu, G., Si, M. W., Charnas, A. R., Milligan, C. A., Zemlyanov, D. Y., Zhou, H., Du, Y. C., Lin, Y. M., Tsai, W., Paduano, Qing, Snure, M., Ye, P. D.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-12-2016
• Subjects: Aluminum oxide; Dielectrics; Hysteresis; Ions; Logic gates; MOCVD; MOSFET
• ISSN: 2156-017X
• DOI: 10.1109/IEDM.2016.7838354

In this paper, high-performance few-layer black phosphorus (BP) PMOSFETs have been demonstrated by using MOCVD BN and ALD Al 2 O 3 as the top-gate dielectric as well as the passivation layer. Highest Ion of 850μA/μm (V ds = -1.8 V) and g m of 340μS/μm (Vds = -0.8 V) have been achieved with the 200nm chancel length (L ch ) devices. Record low contact resistance (R c ) of 0.58kΩ·μm has been obtained on BP transistors by contact engineering. The gate leakage of the BN/Al 2 O 3 bilayer gate dielectric is less than 10 -12 A/μm 2 (V g = -1V) with an EOT of 3nm. SS and hysteresis voltage as low as 70mV/dec and 0.1V have been achieved, indicating a high quality interface between BP and BN.