An X-band internally-matched GaN HEMT amplifier with compact quasi-lumped-element harmonic-terminating network

An X-band internally-matched GaN HEMT amplifier with compact quasi-lumped-element harmonic-terminating network

A compact quasi-lumped-element resonator is proposed as a harmonic-terminating network for internally-matched amplifiers. It is a parallel connection of an inter-digital capacitor and a transmission line, and its compactness is suitable for packaged internally-matched FET amplifiers. An X-band inter...

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Bibliographic Details
Published in:2012 IEEE/MTT-S International Microwave Symposium Digest pp. 1 - 3
Main Authors: Uchida, Hiromitsu, Noto, Hifumi, Yamanaka, Koji, Nakayama, Masatoshi, Hirano, Yoshihito
Format: Conference Proceeding
Language:English
Published: IEEE 01-06-2012
Subjects:
Argon
Asia
Gallium nitride
GaN amplifier
harmonic termination
Microwave amplifiers
microwave resonators
MMICs
Wireless communication
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Summary:A compact quasi-lumped-element resonator is proposed as a harmonic-terminating network for internally-matched amplifiers. It is a parallel connection of an inter-digital capacitor and a transmission line, and its compactness is suitable for packaged internally-matched FET amplifiers. An X-band internally-matched GaN HEMT amplifier has been fabricated, in which the proposed harmonic-terminating network is used at the input of the HEMT for realizing an optimum 2 nd -harmonic input impedance seen from the HEMT to maximize power-added efficiency (PAE). In measurements, PAE of 50 % with output power of more than 18 W has been obtained in a moderate bandwidth of 10 %.
ISBN:1467310859
9781467310857
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2012.6258359