Design of an E-band Doherty Power amplifier

• Published in: 2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) pp. 145 - 148
• Main Authors: Najmussadat, Md, Ahamed, Raju, Parveg, Dristy, Varonen, Mikko, Halonen, Kari A. I.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-07-2018
• Subjects: BiCMOS; BiCMOS integrated circuits; Doherty Power Amplifier; Gain; Impedance; Microstrip; Power Backoff; Power generation; Power transmission lines; SiGe; Silicon germanium; Transistors
• DOI: 10.1109/PRIME.2018.8430350

This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2%. This PA shows PAE of 17% at P1dB and 11.6% at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.