Reflectance of Sub-Wavelength Structure on Silicon Nitride for Solar Cell Application

• Published in: 2009 International Conference on Simulation of Semiconductor Processes and Devices pp. 1 - 4
• Main Authors: Sahoo, K.C., Yiming Li, Chang, E.Y., Men-Ku Lin, Jin-Hua Huang
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-09-2009
• Subjects: Coatings; Etching; Fabrication; Gold; Materials science and technology; Optical surface waves; Photovoltaic cells; Reflectivity; Silicon; Surface texture
• ISSN: 1946-1569
• DOI: 10.1109/SISPAD.2009.5290233

In this study, reflection properties of sub-wavelength structures (SWS) on silicon nitride (Si 3 N 4 ) antireflective coatings are investigated. Numerical calculation of SWS reflection based on a rigorous coupled-wave approach is conducted and compared with the measurement of fabricated samples. We compare the results of single and double-layer-antireflection (SLAR and DLAR) coatings with SWS on Si 3 N 4 , taking into account average residual reflectivity over a range of wavelengths, where the solar efficiency is further estimated. A low average residual reflectivity of 9.56% could be obtained for a Si 3 N 4 SWS height and nonetched layer of 140 nm and 60 nm respectively, which will be less than 80 nm Si3N4 SLAR (~15%) and almost the same as that of a DLAR with 60 nm Si 3 N 4 and 70 nm magnesium fluoride (~10%).