Low-frequency noise in quasi-1D TaSe3 van der Waals nanowires

• Published in: 2017 International Conference on Noise and Fluctuations (ICNF) pp. 1 - 4
• Main Authors: Liu, G., Balandin, A. A., Shur, M. S., Rumyantsev, S. L., Bloodgood, M. A., Salguero, T. T.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-06-2017
• Subjects: 1/f noise; Electromigration; interconnects; Metals; Nanowires; Noise measurement; quasi 1D; TaSe 3; Temperature; Temperature measurement
• DOI: 10.1109/ICNF.2017.7986013

We review results of our studies of the low-frequency electronic noise in quasi-1D TaSe 3 nanowires of. The semi-metallic TaSe 3 is a quasi-1D van der Waals material with an exceptionally high breakdown current density. Our noise studies showed that TaSe 3 nanowires have lower levels of the normalized noise spectral density, S I /I 2 , compared to carbon nanotubes and graphene. The temperature-dependent measurements revealed that the low-frequency 1/f noise becomes the 1/f 2 -type as temperature increases to ~400 K, suggesting the onset of electromigration. Using the Dutta-Horn random fluctuation model of the electronic noise, we determined that the noise activation energy for quasi-1D TaSe 3 nanowires is approximately E P ≈1.0 eV. From the empirical noise model for interconnects, the extracted activation energy, related to electromigration, is E A =0.88 eV, consistent with that for Cu and Al interconnects. Our results suggest that TaSe 3 nanowires and similar systems have potential for ultimately downscaled local interconnect applications.