Effect of dopant thickness variation in zinc oxide infrared LED

• Published in: 2016 3rd International Conference on Electronic Design (ICED) pp. 382 - 386
• Main Authors: Saidi, N.N.A., Wahid, M.H.A., Poopalan, P., Ahmad Hambali, N.A.M., Shahimin, M.M., Sahbudin, U.K., Ariffin, S.N., Azidin, M.A.M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-08-2016
• Subjects: Conductivity; Dopant thickness; I-V; II-VI semiconductor materials; Internal quantum efficiency; Light emitting diodes; P-n junctions; Radiative recombination; Zinc oxide; ZnO IR-LED
• DOI: 10.1109/ICED.2016.7804673

This paper presents investigation carried out on the properties of zinc oxide (ZnO) infrared light emitting diode (IR LED). Specifically, it focuses on dopant thickness variation in n and p layers. The IR LED structure is designed based on simple p-n junction theory. The p contact is deposited on the center top, and n contact is deposited at the edge of the IR LED. Thus, a current-voltage relationship and internal quantum efficiency with a variation of dopant thicknesses can be studied. Turn-on voltage is highly dependent on the dopant concentration. It is observed that 5 pm p-doped produces a more spatial distribution of the radiative emission compared to others. Moreover, 8 pm p-doped shows result of zero efficiency droop. IQE result also indicates the effectiveness of IR LED operation whether by using low or high current. Finally, the properties of ZnO IR LED are summarized and concluded.