High Field-Effect Mobility Amorphous Indium-Tin-Zinc-Oxide Thin-Film Transistors Using Negatively Charged Aluminium-Oxynitride Gate Dielectrics

High Field-Effect Mobility Amorphous Indium-Tin-Zinc-Oxide Thin-Film Transistors Using Negatively Charged Aluminium-Oxynitride Gate Dielectrics

We report the effects of negatively charged aluminium-oxynitride (AlON) gate dielectrics on the electrical properties of amorphous-indium-tin-zinc-oxide (a-ITZO) thin-film transistors (TFTs). The a-ITZO TFT using the AlON gate dielectric has high field-effect mobility (μ FE ) of 116.9 cm 2 N.s, high...

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Bibliographic Details
Published in:2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) pp. 1 - 3
Main Authors: Shin, Donggi, Jang, Kyungsoo, Thi Nguyen, Cam Phu, Park, Heejun, Kim, Jeongsoo, Kim, Youngkuk, Yi, Junsin
Format: Conference Proceeding
Language:English
Published: FTFMD 01-07-2018
Online Access:Get full text
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Summary:We report the effects of negatively charged aluminium-oxynitride (AlON) gate dielectrics on the electrical properties of amorphous-indium-tin-zinc-oxide (a-ITZO) thin-film transistors (TFTs). The a-ITZO TFT using the AlON gate dielectric has high field-effect mobility (μ FE ) of 116.9 cm 2 N.s, high on/off current ratio of ~10 8 and low sub-threshold swing of 0.11. Our high a-ITZO TFTs with \mu_{\mathrm{FE}} of 116.9 cm 2 /V . s, obtained through control of the fixed charges with nitrogen annealing was suitable for application of next-generation displays including high-frame-rate and ultra-high resolution displays.
DOI:10.23919/AM-FPD.2018.8437384