MoOxbased hole selective contact - Inference from the Simulation

MoOxbased hole selective contact - Inference from the Simulation

Transition metal oxide-based carrier selective contacts are under intense research. In this work, we compare the two different set of material parameters of Molybdenum Oxide (MoO x ) using the numerical simulation and discuss different hypothesis while correlating with the reported experimental data...

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Bibliographic Details
Published in:2020 47th IEEE Photovoltaic Specialists Conference (PVSC) pp. 2700 - 2702
Main Authors: Vijayan, Ramachandran Ammapet, Varadharajaperumal, Muthubalan
Format: Conference Proceeding
Language:English
Published: IEEE 14-06-2020
Subjects:
Annealing
Carrier selective contacts
Doping
Hydrogen
Molybdenum
MoO x
Numerical simulation
Photovoltaic cells
Silicon
simulation
trap assisted transport
work function
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Summary:Transition metal oxide-based carrier selective contacts are under intense research. In this work, we compare the two different set of material parameters of Molybdenum Oxide (MoO x ) using the numerical simulation and discuss different hypothesis while correlating with the reported experimental data. We found that a particular set of the parameter could better explain the transfer-length-method (TLM), dark and 1-sun J-V curve, and surface photo-voltage measurement for different annealing temperature. Also, it leads to the different inference that the hydrogen effusion-from the hydrogenated, intrinsic amorphous silicon-could have caused trap-limited transport instead of work function reduction.
DOI:10.1109/PVSC45281.2020.9300602