Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering

We report the first demonstration of strained III-V n-MOSFETs with lattice-mismatched source/drain (S/D) stressors. Lateral tensile strain was induced by In 0.4 Ga 0.6 As S/D on the In 0.53 Ga 0.47 As channel. In-situ doping was incorporated as well for series resistance reduction. We also integrate...

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Bibliographic Details
Published in:	2009 Symposium on VLSI Technology pp. 244 - 245
Main Authors:	Hock-Chun Chin, Xiao Gong, Xinke Liu, Zhe Lin, Yee-Chia Yeo
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-06-2009
Subjects:	Annealing Capacitive sensors Dielectric substrates Doping Epitaxial growth Fabrication III-V semiconductor materials MOSFET circuits Passivation Tensile strain
Online Access:	Get full text
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Summary:	We report the first demonstration of strained III-V n-MOSFETs with lattice-mismatched source/drain (S/D) stressors. Lateral tensile strain was induced by In 0.4 Ga 0.6 As S/D on the In 0.53 Ga 0.47 As channel. In-situ doping was incorporated as well for series resistance reduction. We also integrated SiH 4 +NH 3 passivation for reduction of interface state density on In 0.53 Ga 0.47 As for the first time.
ISBN:	9781424433087 1424433088
ISSN:	0743-1562