Femtosecond relaxation dynamics of photo-excited carriers in Si nanoparticles embedded in SiO2 matrix

Femtosecond relaxation dynamics of photo-excited carriers in Si nanoparticles embedded in SiO2 matrix

We show that full saturation of the interface-located trap states by the photogenerated carriers under the femtosecond excitation in nano-Si/SiO 2 results in the increase of the free carriers' lifetime and the quantum yield of the luminescence. The observed increase of the quantum yield is unex...

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Bibliographic Details
Published in:2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) p. 139
Main Authors: Kadan, V.M., Dan'ko, V.A., Indutnyi, I.Z., Dmitruk, I.M., Korenyuk, P.I., Blonskyi, I.V.
Format: Conference Proceeding
Language:English
Published: IEEE 01-09-2012
Subjects:
femtosecond excitation
Laser excitation
nano-Si/SiO 2
Nanocrystals
Photoluminescence
pump-probe spectroscopy
Shape
Silicon
Time domain analysis
trap states
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Summary:We show that full saturation of the interface-located trap states by the photogenerated carriers under the femtosecond excitation in nano-Si/SiO 2 results in the increase of the free carriers' lifetime and the quantum yield of the luminescence. The observed increase of the quantum yield is unexpected, in contrast to the commonly observed decrease under nanosecond excitation.
ISBN:1467344915
9781467344913
DOI:10.1109/OMEE.2012.6464891