Silicon nanowire memory application using hafnium oxide charge storage layer

• Published in: 2007 International Semiconductor Device Research Symposium pp. 1 - 2
• Main Authors: Xiaoxiao Zhu, Qiliang Li, Ioannou, D.E., Kimes, W.A., Suehle, J.S., Maslar, J.E., Xiong, H.D., Shuo Yang, Richter, C.A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-12-2007
• Subjects: Dielectric devices; Energy consumption; Fabrication; Hafnium oxide; High-K gate dielectrics; Large scale integration; Low voltage; Nonvolatile memory; Silicon; SONOS devices
• ISBN: 9781424418916; 1424418917
• DOI: 10.1109/ISDRS.2007.4422492

This paper discusses about SiNW-based non-volatile memory based on self-aligned CVD-grown SiNWs and a HfO 2 charge storage layer. With double gates and surrounding top gate high-k dielectric stacks, the SiNWs memory devices operates with a small program/erase voltage and low power consumption. Compared to previous work on SiNW SONOS memory devices, structures that use HfO 2 as a top gate surrounding dielectric exhibit better gate control, a larger memory window, and a higher ON/OFF current ratio. Additionally, this self-aligned method of integrating SiNWs into memory devices is more practical for large-scale fabrication.