Extraction of parasitic parameters from silicon carbide power converter using multi-resolution analysis method

Varasitic parameters will affect the optimum performance of Silicon Carbide (SiC) power converter. A combination of boundary analysis and multi-resolution analysis methods is proposed in this paper to extract parasitic parameters of SiC power converters. Parasitic parameters, extracted through combi...

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Bibliographic Details
Published in:	2017 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific) pp. 1 - 6
Main Authors:	Yitong Yin, Oladele, Olanrewaju Kabir, Chengchao Hua, Huapeng Lin, Xuanyang Hu
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-08-2017
Subjects:	boundary analysis Capacitance Computational modeling Finite element analysis Mathematical model multi-resolution analysis parasitic parameter extraction SiC power converter Silicon carbide Sparse matrices Transmission line matrix methods
Online Access:	Get full text
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Summary:	Varasitic parameters will affect the optimum performance of Silicon Carbide (SiC) power converter. A combination of boundary analysis and multi-resolution analysis methods is proposed in this paper to extract parasitic parameters of SiC power converters. Parasitic parameters, extracted through combination of structure analysis and optimal computation are realized by the boundary analysis method and multi-resolution analysis method. The efficiency of the parasitic parameters' extraction is greatly enhanced by the proposed method.
DOI:	10.1109/ITEC-AP.2017.8080961