An innovated JFET structure to adjust the pinch-off voltage by using a control gate

An innovated JFET structure to adjust the pinch-off voltage by using a control gate

A novel N-JFET structure, combined with an innovative control gate between the uniform P-top and source is proposed. Control gate has a heavily doped P-type and a gap to uniform P-top. Pinch-off voltage of the JFET device can be easily adjusted by the size of the gap, while the breakdown voltage can...

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Bibliographic Details
Published in:2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) pp. 1 - 2
Main Authors: Gene Sheu, Ming-Che Yang, Ching-Yuan Wu
Format: Conference Proceeding
Language:English
Published: IEEE 01-10-2017
Subjects:
BCD Intergration
Control gate
Electric fields
Electric potential
Impact ionization
JFETs
Logic gates
Pinch-off voltage
Solid modeling
UHV-JFET
Uniform P-top
Voltage control
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Summary:A novel N-JFET structure, combined with an innovative control gate between the uniform P-top and source is proposed. Control gate has a heavily doped P-type and a gap to uniform P-top. Pinch-off voltage of the JFET device can be easily adjusted by the size of the gap, while the breakdown voltage can be kept in the range of 700V ~ 800V. Rather than using 3D simulation which is more time consuming, this experiment uses 2D simulation for optimization and design.
DOI:10.1109/EDSSC.2017.8126551