High-efficiency GaN/AlGaN HEMT oscillator operating at L-band

• Published in: 2006 Asia-Pacific Microwave Conference pp. 631 - 634
• Main Authors: Jae Shin Kim, Wenhsing Wu, Jenshan Lin, Verma, A., Soohwan Jang, Ren, F., Pearton, S., Fitch, R., Gillespie, J.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-12-2006
• Subjects: Aluminum gallium nitride; Circuits; Design methodology; Gallium nitride; HEMT; HEMTs; High Efficiency; High Power; L-band; Oscillator; Oscillators; Phase noise; Power Amplifiers; Power generation; Power transmission; Resonator; S parameter
• ISBN: 9784902339086; 4902339080
• ISSN: 2165-4727; 2165-4743
• DOI: 10.1109/APMC.2006.4429500

This paper presents a new design method to implement the high efficiency oscillator based on the AlGaN/GaN HEMT for the wireless power transmission (WPT) system. The oscillator has been developed with Se 2 O 3 -passivated AlGaN/GaN HEMT and has achieved the maximum efficiency of 40.5% and the maximum output power of 23 dBm for WPT applications. With both the high output power of the circuit and inherent device material advantages, the phase noise performances of -97 dBc/Hz and -125 dBc/Hz at offsets of 100 kHz and 1 MHz, respectively, have been achieved. To our knowledge, the achieved efficiency is the highest ever reported for a GaN oscillator.