Impact of transistor reliability on RF oscillator phase noise degradation

Impact of transistor reliability on RF oscillator phase noise degradation

The impact of deep sub-micron CMOS transistor reliability on RF oscillator phase noise degradation is demonstrated along with the importance of off-state drain stress for large signal RF applications. Process and device optimization was successful in reducing phase noise degradation to acceptable le...

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Bibliographic Details
Published in:2009 IEEE International Electron Devices Meeting (IEDM) pp. 1 - 4
Main Authors: Reddy, V., Barton, N., Martin, S., Hung, C.M., Krishnan, A., Chancellor, C., Sundar, S., Tsao, A., Corum, D., Yanduru, N., Madhavi, S., Akhtar, S., Pathak, N., Srinivasan, P., Shichijo, S., Benaissa, K., Roy, A., Chatterjee, T., Taylor, R., Krick, J., Brighton, J., Ondrusek, J., Barry, D., Krishnan, S.
Format: Conference Proceeding
Language:English
Published: IEEE 01-12-2009
Subjects:
Degradation
Digital control
Frequency conversion
Local oscillators
Phase noise
Radio frequency
RF signals
Stress
Transmitters
Voltage control
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Summary:The impact of deep sub-micron CMOS transistor reliability on RF oscillator phase noise degradation is demonstrated along with the importance of off-state drain stress for large signal RF applications. Process and device optimization was successful in reducing phase noise degradation to acceptable levels.
ISBN:9781424456390
1424456398
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2009.5424341