Total ionizing dose effects on ultra thin buried oxide floating body memories

The total-ionizing-dose response of 1-transistor floating body memory cells is investigated. Factors affecting the robustness of these novel devices for high reliability applications in space environments are investigated. Memory failure is shown to result from radiation-induced threshold voltage sh...

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Bibliographic Details

Published in:	2012 IEEE International Reliability Physics Symposium (IRPS) pp. MY.3.1 - MY.3.5
Main Authors:	Mahatme, N. N., Schrimpf, R. D., Reed, R. A., Bhuva, B. L., Griffoni, A., Simoen, E., Aoulaiche, M., Linten, D., Jurczak, M., Groeseneken, G.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-04-2012
Subjects:	Charge carrier processes Couplings Floating Body Random Access Memory (FBRAM) Logic gates Radiation effects Silicon Threshold voltage Time measurement Total ionizing dose (TID) Ultra Thin Buried Oxide (UTBOX)
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