Total ionizing dose effects on ultra thin buried oxide floating body memories

• Published in: 2012 IEEE International Reliability Physics Symposium (IRPS) pp. MY.3.1 - MY.3.5
• Main Authors: Mahatme, N. N., Schrimpf, R. D., Reed, R. A., Bhuva, B. L., Griffoni, A., Simoen, E., Aoulaiche, M., Linten, D., Jurczak, M., Groeseneken, G.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-04-2012
• Subjects: Charge carrier processes; Couplings; Floating Body Random Access Memory (FBRAM); Logic gates; Radiation effects; Silicon; Threshold voltage; Time measurement; Total ionizing dose (TID); Ultra Thin Buried Oxide (UTBOX)
• ISBN: 145771678X; 9781457716782
• ISSN: 1541-7026; 1938-1891
• DOI: 10.1109/IRPS.2012.6241920

The total-ionizing-dose response of 1-transistor floating body memory cells is investigated. Factors affecting the robustness of these novel devices for high reliability applications in space environments are investigated. Memory failure is shown to result from radiation-induced threshold voltage shifts and increased leakage. Results from this work can also be used to uncover the effects of process and transistor level degradation on memory performance.