High speed Flash Memory and 1T-DRAM on dopant segregated Schottky barrier (DSSB) FinFET SONOS device for multi-functional SoC applications

• Published in: 2008 IEEE International Electron Devices Meeting pp. 1 - 4
• Main Authors: Sung-Jin Choi, Jin-Woo Han, Sungho Kim, Dong-Hyun Kim, Moon-Gyu Jang, Jong-Heon Yang, Jin Soo Kim, Kwang Hee Kim, Gi Sung Lee, Jae Sub Oh, Myeong Ho Song, Yun Chang Park, Jeoung Woo Kim, Yang-Kyu Choi
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-12-2008
• Subjects: Decision support systems; Fabrication; FinFETs; Flash memory; Nanoscale devices; Nickel; Nonvolatile memory; Schottky barriers; Silicidation; SONOS devices
• ISBN: 9781424423774; 1424423775
• ISSN: 0163-1918; 2156-017X
• DOI: 10.1109/IEDM.2008.4796657

A novel dopant segregated Schottky barrier (DSSB) FinFET SONOS device is demonstrated in terms of multi functioning in a high speed NAND-type flash memory and capacitorless 1T-DRAM. In addition, a novel program mechanism that uses energy band engineered hot electrons (EBEHE) energized by sharp energy band bending at the edge of source/drain (S/D) is proposed for a high speed flash memory programming operation. A short program time of 100 ns and a low program voltage of 12 V yield a V th shift of 3.5 V and a retention time exceeding 10 years. For multi functioning, the operation of a capacitorless 1T-DRAM is also demonstrated with a partially silicided DSSB in the same device.