Impact of channel shape on carrier transport investigated by ensemble monte carlo/molecular dynamics simulation

• Published in: 2011 International Conference on Simulation of Semiconductor Processes and Devices pp. 83 - 86
• Main Authors: Kamioka, T., Imai, H., Watanabe, T., Ohmori, K., Shiraishi, K., Kamakura, Y.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-09-2011
• Subjects: assymetric channel; ballistic transport; collimation effect; Effective mass; Electric potential; Electromagnetic compatibility; EMC-MD method; Fluctuations; MOSFET; Scattering; Shape; Silicon
• ISBN: 9781612844190; 1612844197
• ISSN: 1946-1569; 1946-1577
• DOI: 10.1109/SISPAD.2011.6035055

Effect of the channel shape on the nano-scale carrier transport is studied by using the ensemble Monte-Carlo - molecular dynamics method (EMC/MD). Carrier transport in hone-shaped asymmetric channels which widen from source to drain sides is simulated by comparing that in the conventional straight channels. The obtained conductance of the horn-shaped channels is larger than that of the straight channel, as a result of the enhancement of the carrier mobility in the hone-shaped channel. This can be attributed to two reasons: the collimation effect of the asymmetric channel peculiar in the quasi-ballistic carrier transport regime, and the suppression of carrier-carrier interaction due to widening of the channel.