To elucidate the conductive behaviour of transition metals (Mn, Fe, Co, Ni) doped C20 molecular device

To elucidate the conductive behaviour of transition metals (Mn, Fe, Co, Ni) doped C20 molecular device

Fullerene molecular device configurations are center of allurement for varied number of electronic and transport characteristics by eccentricity of atoms epitomized in the same. In this paper, low bias conductive feature of smallest molecular device C 20 has been observed using doping of transition...

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Bibliographic Details
Published in:2017 8th International Conference on Computing, Communication and Networking Technologies (ICCCNT) pp. 1 - 4
Main Authors: Kaur, Noorinder, Kaur, Rupendeep
Format: Conference Proceeding
Language:English
Published: IEEE 01-07-2017
Subjects:
Bonding forces
Doping
Electrodes
Electrons
Iron
Manganese
Molecular electronics
Nickel
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Summary:Fullerene molecular device configurations are center of allurement for varied number of electronic and transport characteristics by eccentricity of atoms epitomized in the same. In this paper, low bias conductive feature of smallest molecular device C 20 has been observed using doping of transition metals. We examined the doping effect of manganese, iron, cobalt and nickel on C 20 fullerene in a two probe device configuration. Using this configuration the C 20 fullerene is oriented carefully between left and right gold electrodes. Transport properties were investigated and compared which highlighted the superiority of Mn doped device over pristine, Fe, Co and Ni doped C 20 molecular devices.
DOI:10.1109/ICCCNT.2017.8203968