Parameter determination of Schottky -barrier diode model using genetic algorithm

In this paper, genetic algorithm (GA) has been applied to extract the Schottky-barrier height, ideality factor and series resistance, this new method presents the effect of wide range temperature of Schottky-barrier diode (SBD) model using forward current-voltage (I-V) characteristics, is discussed....

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Bibliographic Details
Published in:2011 International Conference on Communications, Computing and Control Applications (CCCA) pp. 1 - 4
Main Authors: Lakehal, B., Dibi, Z., Lakhdar, N., Dendouga, A., Benhaya, A.
Format: Conference Proceeding
Language:English
Published: IEEE 01-03-2011
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Summary:In this paper, genetic algorithm (GA) has been applied to extract the Schottky-barrier height, ideality factor and series resistance, this new method presents the effect of wide range temperature of Schottky-barrier diode (SBD) model using forward current-voltage (I-V) characteristics, is discussed. The results found was compared with experimental current-voltage data, it has been confirmed that the proposed method can obtain higher parameter precision with better computational efficiency more easily than other methods.
ISBN:9781424497959
1424497957
DOI:10.1109/CCCA.2011.6031466