Oxygen-induced high-k degradation in TiN/HfSiO gate stacks

Oxygen-induced high-k degradation in TiN/HfSiO gate stacks

We have investigated the diffusion kinetics of Hf in TiN/HfSiO gate stacks. The Hf upward diffusion is found to be independent of interfacial SiO 2 growth, but depends on the amount of oxygen in the gate stacks. It is also revealed that Hf diffusion into TiN electrode occurs at above 650°C and leads...

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Bibliographic Details
Published in:2012 IEEE Silicon Nanoelectronics Workshop (SNW) pp. 1 - 2
Main Authors: Hosoi, T., Odake, Y., Chikaraishi, K., Arimura, H., Kitano, N., Shimura, T., Watanabe, H.
Format: Conference Proceeding
Language:English
Published: IEEE 01-06-2012
Subjects:
Hafnium
High K dielectric materials
Logic gates
Oxidation
Silicon
Surface treatment
Tin
Online Access:Get full text
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Summary:We have investigated the diffusion kinetics of Hf in TiN/HfSiO gate stacks. The Hf upward diffusion is found to be independent of interfacial SiO 2 growth, but depends on the amount of oxygen in the gate stacks. It is also revealed that Hf diffusion into TiN electrode occurs at above 650°C and leads to high-k degradation.
ISBN:1467309966
9781467309967
ISSN:2161-4636
2161-4644
DOI:10.1109/SNW.2012.6243358