A broadband medium power amplifier for millimeter-wave applications
A power amplifier using 0.15-/spl mu/m GaAs pHEMT technology is presented. This amplifier combines two conventional distributed amplifiers to achieve wide bandwidth, high gain and moderate output power. The measured small signal gain is 15.3 /spl plusmn/ 1 dB from 4 to 37 GHz with a chip size of 2 /...
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Published in: | 2005 Asia-Pacific Microwave Conference Proceedings Vol. 3; p. 3 pp. |
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Main Authors: | , , |
Format: | Conference Proceeding |
Language: | English |
Published: |
IEEE
2005
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Subjects: | |
Online Access: | Get full text |
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Summary: | A power amplifier using 0.15-/spl mu/m GaAs pHEMT technology is presented. This amplifier combines two conventional distributed amplifiers to achieve wide bandwidth, high gain and moderate output power. The measured small signal gain is 15.3 /spl plusmn/ 1 dB from 4 to 37 GHz with a chip size of 2 /spl times/ 1.5 mm/sup 2/. The output saturated power is 20.6-23.3 dBm from 4 to 37 GHz. The wide bandwidth and large output power makes it useful in many microwave and millimeter wave applications, such as broadband amplifiers in microwave equipment, and ultra-wide-band signal amplification. |
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ISBN: | 078039433X 9780780394339 |
ISSN: | 2165-4727 2165-4743 |
DOI: | 10.1109/APMC.2005.1606595 |