The use of an in-situ ECR hydrogen plasma to remove the oxide from InP substrates prior to epitaxial growth

The authors present results of studies on the use of a hydrogen plasma generated by an electron cyclotron resonance (ECR) source in-situ in an MBE (molecular beam epitaxy) growth chamber to remove the surface oxide on InP at temperatures significantly lower than thermal desorption temperatures, ther...

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Bibliographic Details

Published in:	LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels pp. 90 - 92
Main Authors:	Robinson, B.J., Thompson, D.A., Hofstra, P.G., Balcaitis, G., McMaster, S.A.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 1992
Subjects:	Cyclotrons Electron beams Hydrogen Indium phosphide Molecular beam epitaxial growth Plasma sources Plasma temperature Resonance Substrates Thermal decomposition
Online Access:	Get full text
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