The use of an in-situ ECR hydrogen plasma to remove the oxide from InP substrates prior to epitaxial growth

• Published in: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels pp. 90 - 92
• Main Authors: Robinson, B.J., Thompson, D.A., Hofstra, P.G., Balcaitis, G., McMaster, S.A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1992
• Subjects: Cyclotrons; Electron beams; Hydrogen; Indium phosphide; Molecular beam epitaxial growth; Plasma sources; Plasma temperature; Resonance; Substrates; Thermal decomposition
• ISBN: 0780305221; 9780780305229
• DOI: 10.1109/ICIPRM.1992.235719

The authors present results of studies on the use of a hydrogen plasma generated by an electron cyclotron resonance (ECR) source in-situ in an MBE (molecular beam epitaxy) growth chamber to remove the surface oxide on InP at temperatures significantly lower than thermal desorption temperatures, thereby eliminating the risk of surface decomposition. It is shown that, for substrate temperatures as low as 400 degrees C, an ECR hydrogen plasma operating with an excess P/sub 2/ flux on the sample surface may be used to remove the oxide from InP substrates prior to epitaxial growth. A typical exposure for this treatment is short (<or= one minute) and at a significantly lower temperature 50 to 100 degrees C less than conventional thermal desorption temperatures, thereby reducing the risk of decomposition of the substrate.< >