High transconductance InAlAs/InGaAs double heterostructure MESFETs with in-situ aluminum oxide gate barrier

High transconductance InAlAs/InGaAs double heterostructure MESFETs with in-situ aluminum oxide gate barrier

By incorporating an in-situ aluminum oxide gate barrier in InAlAs/InGaAs double heterostructure FETs we have reduced the gate leakage current by more than an order of magnitude. The measured transconductance is 130 mS/mm and the device pinches off at -1.5 V. The oxide barrier is prepared by in-situ...

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Bibliographic Details
Published in:1984 International Electron Devices Meeting pp. 356 - 359
Main Authors: Chang, T.Y., Behringer, R.E., Howard, R.E., Liao, A.S.H., Jackel, L.D., Caridi, E.A., Skocpol, W.J., Epworth, R.W.
Format: Conference Proceeding
Language:English
Published: IRE 1984
Subjects:
Aluminum oxide
HEMTs
Indium compounds
Indium gallium arsenide
Leakage current
MESFETs
MODFETs
Oxidation
Plasma measurements
Transconductance
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Summary:By incorporating an in-situ aluminum oxide gate barrier in InAlAs/InGaAs double heterostructure FETs we have reduced the gate leakage current by more than an order of magnitude. The measured transconductance is 130 mS/mm and the device pinches off at -1.5 V. The oxide barrier is prepared by in-situ deposition of 2 nm Al in an MBE system followed by complete oxidation in air or during exposure to an oxygen plasma. The device structure and fabrication process is readily scaled to submicron gate lengths.
DOI:10.1109/IEDM.1984.190722