STRIPE-a high-speed VLSI bipolar technology featuring self-aligned single-poly base and submicron emitter contacts

• Published in: Digest of Technical Papers.1990 Symposium on VLSI Technology pp. 53 - 54
• Main Authors: Drowley, C.I., Huang, W.M., Vande Voorde, P.J., Pettengill, D., Turner, J.E., Kapoor, A.K., Lin, C.-H., Burton, G., Rosner, S.J., Brigham, K., Fu, H.-S., Oh, S.-Y., Scott, M.P., Chiang, S.-Y., Wang, A.
• Format: Conference Proceeding
• Language: English
• Published: 1990
• DOI: 10.1109/VLSIT.1990.111004

Experimental results are presented for a high-performance silicon bipolar transistor structure utilizing a single layer of polysilicon for both the base and emitter contacts. This structure, called STRIPE (self-aligned trench-isolated polysilicon electrodes), provides a 2.0-μm emitter/base polysilicon contact separation. A 0.4-μm emitter width is achieved with conventional 0.8-μm optical lithography. These dimensions are comparable to those achievable with double-poly structures. Using the STRIPE structure, transistors have been fabricated with cutoff frequency as high as 33.8 GHz