HEMT Low-Noise Amplifier for Ka-Band

HEMT Low-Noise Amplifier for Ka-Band

Using 0.25 micron gate-length High Electron Mobility Transistors (HEMTs), a two-stage amplifier has been developed that demonstrates the potential for high-gain, low-noise pre-amplification at K/sub a/ -band. The amplifier exhibits a noise figure of 4.0 dB with 16.5 dB gain at 37.5 GHz and under sli...

Full description

Saved in:
Bibliographic Details
Published in:1987 IEEE MTT-S International Microwave Symposium Digest Vol. 2; pp. 1007 - 1010
Main Authors: Upton, M.A.G., Smith, P.M., Chao, P.C.
Format: Conference Proceeding
Language:English
Published: MTT005 1987
Subjects:
Assembly
Frequency measurement
Gain measurement
HEMTs
Low-noise amplifiers
Millimeter wave radar
Millimeter wave transistors
Noise figure
Noise measurement
Radar antennas
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Using 0.25 micron gate-length High Electron Mobility Transistors (HEMTs), a two-stage amplifier has been developed that demonstrates the potential for high-gain, low-noise pre-amplification at K/sub a/ -band. The amplifier exhibits a noise figure of 4.0 dB with 16.5 dB gain at 37.5 GHz and under slightly different bias conditions shows flat gain of around 11.0 dB from 30.5-37.5 GHz.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1987.1132594