Noise in multi-heterostructure avalanche photodetectors

Noise in multi-heterostructure avalanche photodetectors

The multiplication noise in multiheterostructure avalanche photodetectors has been calculated for different degrees of carrier feedback. For this purpose, a multiple-feedback network representation is used which provides a direct method of evaluation of noise performance. The effect of feedback has...

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Bibliographic Details
Published in:1982 International Electron Devices Meeting pp. 338 - 341
Main Authors: Rakshit, S., Chakraborti, N.B.
Format: Conference Proceeding
Language:English
Published: IRE 1982
Subjects:
Carrier confinement
Charge carrier processes
Detectors
Feedback
Heterojunctions
Ionization
Noise reduction
Photodetectors
Semiconductor device noise
Signal to noise ratio
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Summary:The multiplication noise in multiheterostructure avalanche photodetectors has been calculated for different degrees of carrier feedback. For this purpose, a multiple-feedback network representation is used which provides a direct method of evaluation of noise performance. The effect of feedback has been found to be appreciable in III-V compound APDs, being less with larger number of stages.
DOI:10.1109/IEDM.1982.190289