35 GHz pseudomorphic HEMT MMIC power amplifier

35 GHz pseudomorphic HEMT MMIC power amplifier

0.25 mu m-gate-length double-heterojunction InGaAs pseudomorphic HEMTs (high-electron-mobility transistors) have been integrated into a three-stage power amplifier MMIC (monolithic microwave integrated circuit) designed for the 34-36 GHz band. This first pass design exhibited a peak small-signal gai...

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Published in:1991 IEEE MTT-S International Microwave Symposium Digest pp. 335 - 338 vol.1
Main Authors: Ferguson, D.W., Allen, S.A., Kao, M.Y., Smith, P.M., Chao, P.C., Upton, M.A.G., Ballingall, J.M.
Format: Conference Proceeding
Language:English
Published: IEEE 1991
Subjects:
HEMTs
High power amplifiers
Indium gallium arsenide
Microwave amplifiers
Microwave integrated circuits
MMICs
MODFETs
Monolithic integrated circuits
PHEMTs
Power amplifiers
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Abstract 0.25 mu m-gate-length double-heterojunction InGaAs pseudomorphic HEMTs (high-electron-mobility transistors) have been integrated into a three-stage power amplifier MMIC (monolithic microwave integrated circuit) designed for the 34-36 GHz band. This first pass design exhibited a peak small-signal gain of 30 dB, a minimum output power of 200 mW with 20-dB associated gain, a power-added efficiency of greater than 18%, and a return loss of greater than 14 dB over the entire band. This performance was measured with the MMIC operating from a single 6 V DC supply.< >
AbstractList 0.25 mu m-gate-length double-heterojunction InGaAs pseudomorphic HEMTs (high-electron-mobility transistors) have been integrated into a three-stage power amplifier MMIC (monolithic microwave integrated circuit) designed for the 34-36 GHz band. This first pass design exhibited a peak small-signal gain of 30 dB, a minimum output power of 200 mW with 20-dB associated gain, a power-added efficiency of greater than 18%, and a return loss of greater than 14 dB over the entire band. This performance was measured with the MMIC operating from a single 6 V DC supply.< >
Author Upton, M.A.G.
Allen, S.A.
Chao, P.C.
Ferguson, D.W.
Ballingall, J.M.
Smith, P.M.
Kao, M.Y.
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  fullname: Upton, M.A.G.
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  givenname: J.M.
  surname: Ballingall
  fullname: Ballingall, J.M.
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Snippet 0.25 mu m-gate-length double-heterojunction InGaAs pseudomorphic HEMTs (high-electron-mobility transistors) have been integrated into a three-stage power...
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StartPage 335
SubjectTerms HEMTs
High power amplifiers
Indium gallium arsenide
Microwave amplifiers
Microwave integrated circuits
MMICs
MODFETs
Monolithic integrated circuits
PHEMTs
Power amplifiers
Title 35 GHz pseudomorphic HEMT MMIC power amplifier
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