35 GHz pseudomorphic HEMT MMIC power amplifier

• Published in: 1991 IEEE MTT-S International Microwave Symposium Digest pp. 335 - 338 vol.1
• Main Authors: Ferguson, D.W., Allen, S.A., Kao, M.Y., Smith, P.M., Chao, P.C., Upton, M.A.G., Ballingall, J.M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1991
• Subjects: HEMTs; High power amplifiers; Indium gallium arsenide; Microwave amplifiers; Microwave integrated circuits; MMICs; MODFETs; Monolithic integrated circuits; PHEMTs; Power amplifiers
• ISBN: 9780879425913; 0879425911
• ISSN: 0149-645X; 2576-7216
• DOI: 10.1109/MWSYM.1991.146999

0.25 mu m-gate-length double-heterojunction InGaAs pseudomorphic HEMTs (high-electron-mobility transistors) have been integrated into a three-stage power amplifier MMIC (monolithic microwave integrated circuit) designed for the 34-36 GHz band. This first pass design exhibited a peak small-signal gain of 30 dB, a minimum output power of 200 mW with 20-dB associated gain, a power-added efficiency of greater than 18%, and a return loss of greater than 14 dB over the entire band. This performance was measured with the MMIC operating from a single 6 V DC supply.< >