A flip-chip high efficiency X-band HPA

A flip-chip high efficiency X-band HPA

We have developed a broad band, high efficiency, X-band MMIC HPA implemented with our flip-chip technology. The amplifier utilizes PHEMT devices to achieve better than 35% PAE (40% peak) with an associated five watts of output power. The flip-chip technology reduces cost while at the same time incre...

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Bibliographic Details
Published in:1997 IEEE MTT-S International Microwave Symposium Digest Vol. 2; pp. 889 - 892 vol.2
Main Authors: Cameron, P., Pan, W., Hanz, C., Nicklaus, R., Chu, P., Wong, D., Cisco, T.
Format: Conference Proceeding
Language:English
Published: IEEE 1997
Subjects:
Aircraft
Costs
Fabrication
FETs
Gallium arsenide
MMICs
PHEMTs
Power amplifiers
Power generation
Thermal resistance
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Summary:We have developed a broad band, high efficiency, X-band MMIC HPA implemented with our flip-chip technology. The amplifier utilizes PHEMT devices to achieve better than 35% PAE (40% peak) with an associated five watts of output power. The flip-chip technology reduces cost while at the same time increases performance. To our knowledge, this is the first reported flip-chip HPA that uses PHEMT devices.
ISBN:9780780338142
0780338146
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1997.602942