Modeling arsenic redistribution during titanium silicide formation

• Published in: Technical Digest., International Electron Devices Meeting pp. 644 - 647
• Main Authors: Taylor, R.G., Salama, C.A.T., Ratnam, P., Naem, A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1988
• Subjects: Contact resistance; Degradation; Equations; Iron; Mass spectroscopy; Silicides; Silicon; Surface resistance; Telecommunications; Titanium
• ISSN: 0163-1918; 2156-017X
• DOI: 10.1109/IEDM.1988.32896

A novel double-moving-boundary approach to modeling arsenic redistribution during titanium silicide formation over shallow junctions is presented. Arsenic redistribution is modeled by segregation across the TiSi/sub 2//Si interface, rapid diffusion in the TiSi/sub 2/ layer, and evaporation at the TiSi/sub 2/ surface. Physical models for each redistribution mechanism are implemented in process simulation, and the main parameters are extracted by comparing simulations to experimental secondary ion mass spectrometry (SIMS) profiles of arsenic in the TiSi/sub 2//Si structure. It is concluded that the approach allows accurate extraction of the specific contact resistivity after TiSi/sub 2/ contact formation to shallow junctions commonly encountered in micron and submicron silicon device technology.< >