A Study of the Fast Current Protection Method for the Silicon-Carbide (SiC) MOSFETs

Power converters play a critical role in almost all applications, particularly in medium and high-power fields where semiconductors must withstand high current and voltage conditions. Consequently, implementing effective protection methods against overcurrent and short circuit faults is imperative....

Full description

Saved in:

Bibliographic Details
Published in:	2024 Tenth International Conference on Communications and Electronics (ICCE) pp. 696 - 700
Main Authors:	Nguyen, Khac-Tiu, Nguyen, Danh-Nam, Pham, The-Tiep, Nguyen, Duy-Dinh
Format:	Conference Proceeding
Language:	English
Published:	IEEE 31-07-2024
Subjects:	Circuit faults desaturation Insulated gate bipolar transistors Mathematical models MOSFET over current short circuit SiC MOSFETs Silicon Silicon carbide Voltage
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	Power converters play a critical role in almost all applications, particularly in medium and high-power fields where semiconductors must withstand high current and voltage conditions. Consequently, implementing effective protection methods against overcurrent and short circuit faults is imperative. The desaturation method has emerged as a widely utilized approach, especially with Si IGBT. However, applying this method to SiC MOSFETs poses challenges due to limitations in response time. Thus, a thorough analysis of the desaturation method for SiC MOSFETs is warranted. This paper elucidates the operational principles of desaturation, conducting simulations utilizing LT-Spice XVII with real element models. Additionally, experimental results employing the gate driver IC NCV57000 from ON-Semiconductor are presented to validate the methodologies and findings.
ISSN:	2836-4392
DOI:	10.1109/ICCE62051.2024.10634726